The Temperature-Dependent Diffusion Mechanism of Zn in InP Using the Semiclosed Diffusion Method

Abstract

A novel semiclosed diffusion technique for III-V semiconductors has been developed giving ease of control of the operating and junction depth. The secondary-ion mass-spectrometry atom profiles and carrier-concentration profiles have been used to develop a mechanism involving the temperature dependence of neutral Zn formation. Doubly-ionized interstitials are thought to be the diffusion species.