Concepedia

Diffusion In Semiconductors

Diffusion in Semiconductors is a physical process within solid-state materials science wherein dopant atoms or point defects migrate through a semiconductor lattice via atomic-scale mechanisms driven by concentration gradients, thermal energy, or electric fields, distinguished from general diffusion in solids by its critical role in determining electronic properties and device performance in semiconductor technology.

961

Publications

53.3K

Citations

2.4K

Authors

578

Institutions

Publications per year

2017–2026

15

Parents

Publications

961

Absence of Diffusion in Certain Random Lattices

P. W. Anderson · Physical Review · 1958 · 12.3K citations

, , +13

Solid-phase diffusion mechanism for GaAs nanowire growth

Ann Persson, Magnus Larsson, Stig Stenström et al. · Nature Materials · 2004 · 661 citations

, , +14

The science and engineering of microelectronic fabrication

Choice Reviews Online · 1996 · 648 citations

, , +17

Disorder of an AlAs-GaAs superlattice by impurity diffusion

W. D. Laidig, N. Holonyak, M. D. Camras et al. · Applied Physics Letters · 1981 · 599 citations

, , +17

<i>Point Defects and Diffusion</i>

C. P. Flynn, J. J. Burton · Physics Today · 1973 · 543 citations

, , +16

1–5 of 961

Authors

2.4K

  1. BT
    B. Tuck

    University of Nottingham, United Kingdom

    15 publications · 549 citations

    13

    h-index

  2. UG
    U. Gösele

    Max Planck Institute of Microstructure Physics, Germany

    14 publications · 622 citations

    12

    h-index

  3. DM
    D. Mathiot

    Centre National de la Recherche Scientifique, France

    10 publications · 296 citations

    10

    h-index

  4. NA
    N. A. Stolwijk

    University of Münster, Germany

    9 publications · 417 citations

    9

    h-index

  5. JF
    J. F. Gibbons

    Stanford University, United States

    9 publications · 465 citations

    9

    h-index

1–5 of 2.4K

Institutions

578

  1. Stanford University

    Stanford, United States

    20 h-index

    82 publications

    3.8K citations

  2. IBM (United States)

    Armonk, United States

    18 h-index

    41 publications

    1.9K citations

  3. Centre National de la Recherche Scientifique

    Paris, France

    15 h-index

    45 publications

    1.7K citations

  4. University of Münster

    Münster, Germany

    14 h-index

    42 publications

    1.8K citations

  5. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    14 h-index

    36 publications

    1.4K citations

  6. University of Florida

    Gainesville, United States

    12 h-index

    33 publications

    755 citations

  7. University of Illinois Urbana-Champaign

    Urbana, United States

    12 h-index

    47 publications

    5.4K citations

  8. University of Nottingham

    Nottingham, United Kingdom

    12 h-index

    31 publications

    963 citations

1–8 of 578

Venues

  1. Journal of Applied Physics

    181 publications · 8.8K citations

    49

    h-index

  2. Applied Physics Letters

    135 publications · 6.4K citations

    42

    h-index

  3. Journal of The Electrochemical Society

    JES · 76 publications · 2.9K citations

    28

    h-index

  4. Physical review. B, Condensed matter

    PRB · 38 publications · 2K citations

    26

    h-index

  5. Physical Review Letters

    PRL · 27 publications · 1.9K citations

    23

    h-index

1–5