J. C. Bourgoin - Concepedia

Author

J. C. Bourgoin

Also Known As

Bourgoin ,J., Bourgoin, J.C., Bourgoin,Jacques C, J BOURGOIN, J Bourgoin, J C Bourgoin, J. -C. Bourgoin, J. Bourgoin, J. C Bourgoin, J. C. BOURGOIN

305

Publications

7.6K

Citations

H-Index

115

Concepts

All Affiliations

Université Paris Cité Sorbonne Université École Normale Supérieure - PSL Centre National de la Recherche Scientifique Physique et Mécanique des Milieux Hétérogènes

About

J. C. Bourgoin is an author at Université Paris Cité specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	37	123	5.4K
2	Applied Physics	37	123	5.3K
3	Natural Sciences	15	19	822
4	Health Sciences	1	1	13
5	Medicine	1	1	252

J. C. Bourgoin

133

Publications

5.8K

Citations

H-Index

Page 1

	Year	Citations
Irradiation-induced defects in GaAs Dirk Pons, J. C. Bourgoin Journal of Physics C Solid State Physics SemiconductorsIi-vi SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1985	434
Native defects in gallium arsenide J. C. Bourgoin, H. J. von Bardeleben, D. Stiévenard Journal of Applied Physics Point DefectsGaas MaterialsEngineeringDefect ToleranceSemiconductors	1988	393
A new mechanism for interstistitial migration J. C. Bourgoin, J. W. Corbett Physics Letters A BiologyPattern FormationInterfacial ProcessNew MechanismMorphogenesis	1972	252
Identification of a defect in a semiconductor:<i>EL</i>2 in GaAs H. J. von Bardeleben, D. Stiévenard, D. Deresmes, Physical review. B, Condensed matter SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEl2 RegenerationEngineering	1986	240
Enhanced diffusion mechanisms J. C. Bourgoin, J. W. Corbett Radiation Effects EngineeringSoft MatterSemiconductorsIon ImplantationNanoelectronics	1978	210
Crystallization in amorphous silicon K. Zellama, P. Germain, S. Squelard, Journal of Applied Physics Materials ScienceAmorphous Silicon LayersNucleation RateEngineeringPhysics	1979	204
Energy dependence of deep level introduction in electron irradiated GaAs Dirk Pons, P. M. Mooney, J. C. Bourgoin Journal of Applied Physics Electrical EngineeringIntroduction RatesNuclear PhysicsPhysicsRadiation Materials Science	1980	173
Crystallization in amorphous germanium P. Germain, K. Zellama, S. Squelard, Journal of Applied Physics Materials ScienceNucleation RateEngineeringAmorphous Germanium LayersCrystal Material	1979	129
An annealing study of electron irradiation-induced defects in GaAs Dirk Pons, A. Mircéa, J. C. Bourgoin Journal of Applied Physics SemiconductorsElectrical EngineeringElectronic DevicesEngineeringEpitaxial Growth	1980	124
Behavior of electron-irradiation-induced defects in GaAs D. Stiévenard, X. Boddaert, J. C. Bourgoin, Physical review. B, Condensed matter SemiconductorsElectron-irradiation-induced DefectsElectrical EngineeringSemiconductor TechnologyEngineering	1990	121

Page 1