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Two-dimensional electron gas m.e.s.f.e.t. structure
121
Citations
4
References
1980
Year
Two-dimensional Electron GasFirst M.e.s.f.e.tElectrical EngineeringWide-bandgap SemiconductorEngineeringTheoretical CalculationsPhysicsNatural SciencesApplied PhysicsCondensed Matter PhysicsQuantum MaterialsLow-dimensional SystemQuantum ChemistryMicroelectronicsElectronic StructureCategoryiii-v SemiconductorElectron Physic
The first m.e.s.f.e.t. structure is reported in which the channel near pinch-off is occupied by a two-dimensional electron gas accumulated at the interface of a GaAs(N)-AlxGa1−xAs(N) heterojunction. Experimental data are in good agreement with theoretical calculations.
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