Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

New and unified model for Schottky barrier and III–V insulator interface states formation

W. E. Spicer, P. W. Chye, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1979 · 930 citations

Engineering, Materials Engineering, Materials Science +17

Surface stoichiometry and structure of GaAs

John R. Arthur · Surface Science · 1974 · 330 citations

Natural Sciences, Materials Engineering, Materials Science +12

Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

P. Drathen, W. Ranke, K. Jacobi · Surface Science · 1978 · 313 citations

Engineering, Materials Engineering, Materials Science +10

GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face

A. Y. Cho · Journal of Applied Physics · 1971 · 297 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electronic surface properties of Ga and In containing III–V compounds

T.L. van Rooy · Journal of Vacuum Science and Technology · 1977 · 231 citations

Natural Sciences, Materials Science, Physics +16