Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE - Concepedia

Concepedia

Publication | Closed Access

Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE

153

Citations

19

References

1980

Year

J. Massies, P. Étienne, F. Dézaly, Nuyen T. Linh

Surface Science

Materials ScienceSemiconductorsEngineeringStoichiometry EffectsSurface ScienceApplied PhysicsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorSurface Properties

References

	Year	Citations

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