Concepedia

Semiconductor Surface Preparation

Semiconductor Surface Preparation is a methodological process within the field of materials science that comprises the systematic cleaning, passivation, and atomic-level conditioning of a semiconductor interface to remove contaminants and minimize interfacial states prior to metal deposition, thereby enabling the formation of well-defined and reproducible metal-semiconductor junctions.

1.2K

Publications

47.4K

Citations

4.8K

Authors

940

Institutions

Publications per year

2017–2026

144

Parents

Publications

1.2K

Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

Eli Yablonovitch, David L. Allara, Che-Chen Chang et al. · Physical Review Letters · 1986 · 955 citations

, , +17

Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology

Werner Kern · Medical Entomology and Zoology · 1970 · 820 citations

, , +14

Surface Engineering of Ambient-Air-Processed Cesium Lead Triiodide Layers for Efficient Solar Cells

So Me Yoon, Hanul Min, Jong Beom Kim et al. · Joule · 2020 · 418 citations · Full text

, , +16

GaAs interfacial self-cleaning by atomic layer deposition

Christopher L. Hinkle, Arif Sonnet, Eric M. Vogel et al. · Applied Physics Letters · 2008 · 382 citations · Full text

, , +17

The surface as molecular reagent: organic chemistry at the semiconductor interface

Michael A. Filler, Stacey F. Bent · Progress in Surface Science · 2003 · 364 citations

, , +16

1–5 of 1.2K

Authors

4.8K

  1. TH
    Thomas Hannappel

    Technische Universität Ilmenau, Germany

    12 publications · 371 citations

    11

    h-index

  2. LD
    L. Däweritz

    Paul Drude Institute for Solid State Electronics, Germany

    9 publications · 469 citations

    9

    h-index

  3. KJ
    K. Jacobi

    Fritz Haber Institute of the Max Planck Society, Germany

    9 publications · 625 citations

    9

    h-index

  4. WJ
    Wolfram Jaegermann

    Technische Universität Darmstadt, Germany

    8 publications · 184 citations

    8

    h-index

  5. AS
    A. S. Terekhov

    Institute of Semiconductor Physics, Russia

    8 publications · 263 citations

    8

    h-index

1–5 of 4.8K

Institutions

940

  1. Stanford University

    Stanford, United States

    22 h-index

    103 publications

    5K citations

  2. Centre National de la Recherche Scientifique

    Paris, France

    20 h-index

    144 publications

    4.2K citations

  3. National Laboratory of the Rockies

    Golden, United States

    15 h-index

    90 publications

    5K citations

  4. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    15 h-index

    58 publications

    2.9K citations

  5. IMEC

    Leuven, Belgium

    14 h-index

    111 publications

    4.9K citations

  6. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    13 h-index

    92 publications

    2.7K citations

  7. Helmholtz-Zentrum Berlin für Materialien und Energie

    Berlin, Germany

    13 h-index

    66 publications

    2.8K citations

  8. Chinese Academy of Sciences

    Beijing, China

    13 h-index

    79 publications

    1.8K citations

1–8 of 940

Venues

  1. Applied Physics Letters

    119 publications · 5.5K citations

    43

    h-index

  2. Surface Science

    71 publications · 3.2K citations

    32

    h-index

  3. Journal of Applied Physics

    59 publications · 2.5K citations

    29

    h-index

  4. Journal of The Electrochemical Society

    JES · 44 publications · 2.3K citations

    25

    h-index

  5. Journal of Crystal Growth

    57 publications · 1.5K citations

    23

    h-index

1–5