Electronic surface properties of Ga and In containing III–V compounds

Abstract

Based upon contact potential-difference measurements, photoemission experiments, and low-energy-loss spectra of GaSb, GaAs, GaP, InAs, and InP, we propose an empirical model for the surface states at the (110) cleavage face of all Ga and In containing III–V compounds with the zincblende structure. Three filled and two empty surface-state bands were identified. The positions of two of the filled states for the GaAs (110) face are consistent with available data from angle-resolved photoemission experiments. However, for any other states no experimental data are available.