Stoichiometry Control

Stoichiometry Control is a methodological framework in semiconductor crystal growth that ensures the precise regulation of elemental composition ratios during synthesis to achieve target crystalline phases and minimize defect formation.

246

Publications

11.4K

Citations

1.2K

Authors

403

Institutions

Publications per year

2017–2026

60

Authors

1.2K

  1. RE
    Roman Engel‐Herbert

    Pennsylvania State University, United States

    4 publications · 130 citations

    4

    h-index

  2. DE
    D. E. Holmes

    Rockwell Automation (United States), United States

    4 publications · 435 citations

    4

    h-index

  3. KM
    Katsumi Mochizuki

    Tohoku University, Japan

    3 publications · 49 citations

    3

    h-index

  4. KE
    K. Elliott

    Rockwell Automation (United States), United States

    3 publications · 407 citations

    3

    h-index

  5. SS
    Susanne Stemmer

    University of California, Santa Barbara, United States

    3 publications · 139 citations

    3

    h-index

1–5 of 1.2K

Venues

  1. Journal of Crystal Growth

    19 publications · 812 citations

    16

    h-index

  2. Applied Physics Letters

    19 publications · 877 citations

    15

    h-index

  3. Journal of Applied Physics

    15 publications · 411 citations

    13

    h-index

  4. Journal of Alloys and Compounds

    8 publications · 204 citations

    8

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 6 publications · 121 citations

    6

    h-index

1–5