IEEE Transactions on Electron Devices · 1982 · 592 citations · 20 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsCarrier ConcentrationElectron MobilityHeterostructure DevicesSchottky BarriersSubband StructureTransport In HeterostructuresTwo-dimensional Electron GasesTwo-dimensional Semiconductor Heterostructures
Theoretical calculations have been developed for a two-dimensional electron gas FET (TEGFET) constituted by a AlGaAs (n)-GaAs (n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> or p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> ) heterostructure in which the Schottky gate is deposited on the AlGaAs(n) top layer. The theory takes into account: i) the subband splitting in the two-dimensional electron gas (2-DEG); and ii) the existence of an undoped AlGaAs spacer layer which has been found to enhance the electron mobility. The sheet carrier concentration of the TEGFET has been calculated, and a simple analytical formula has been established for the charge control in large and small gate FET.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
Two-dimensional electron gas at a semiconductor-semiconductor interface
H. L. Störmer, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1979 · 448 citations