Applied Physics Letters · 1991 · 79 citations · 12 references
Natural SciencesMaterials EngineeringMaterials SciencePlasma PhysicsRadiation PhysicsSurface ScienceImplant MaterialsIon ImplantationGas PorosityIon Implantation EffectsPore GeometryPorous StructuresSurface Modification By Ion Implantation
Anomalous elevations up to 6 μm of the ion-implanted GaSb surface were observed. This swelling phenomenon is related to the formation of a porous layer and is dependent on the mass, energy, and dose of the implanted ions. A strong amount of oxygen was measured in the porous layers but this oxygen is likely not responsible for the swelling. The behavior of implanted GaSb is very similar to that of InSb previously described.
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LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SI
R. E. Whan, G. W. Arnold · Applied Physics Letters · 1970 · 82 citations