A. Axmann

1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon

H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 565 citations

Semiconductors, Photonics, Electrical Engineering +15

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

H. Ennen, Gernot S. Pomrenke, A. Axmann et al. · Applied Physics Letters · 1985 · 347 citations

Semiconductors, Photonics, Electrical Engineering +15

Subpicosecond carrier lifetimes in radiation-damaged GaAs

M. Lambsdorff, J. Kühl, J. Rosenzweig et al. · Applied Physics Letters · 1991 · 102 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors

C. Moglestue, J. Rosenzweig, J. Kühl et al. · Journal of Applied Physics · 1991 · 80 citations

Categoryquantum Electronics, Engineering, Gaas Layer Thickness +16

Rare earth activated luminescence in InP, GaP and GaAs

H. Ennen, U. Kaufmann, Gernot S. Pomrenke et al. · Journal of Crystal Growth · 1983 · 77 citations

Photoluminescence, Engineering, Physics +4