J. Rosenzweig - Concepedia

Author

J. Rosenzweig

Fraunhofer Institute for Applied Solid State Physics

Also Known As

J Rosenzweig, J. Rosenzweig, J.B. Rosenzweig, Josef Rosenzweig

147

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Universidad Politécnica de Madrid Max Planck Institute for Solid State Research University of Nottingham Etegent Technologies (United States)

About

J. Rosenzweig is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, optoelectronics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	37	1.3K
2	Applied Physics	19	27	1.1K
3	Electrical Engineering	18	29	880
4	Computer Engineering	8	8	143
5	Materials Science	1	1	15

J. Rosenzweig

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers J.D. Ralston, S. Weisser, I. Esquivias, IEEE Journal of Quantum Electronics PhotonicsEngineeringLaser ScienceHigh-speed ApplicationApplied Physics	1993	157
Subpicosecond carrier lifetimes in radiation-damaged GaAs M. Lambsdorff, J. Kühl, J. Rosenzweig, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1991	102
Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers S. Weisser, E.C. Larkins, K. Czotscher, IEEE Photonics Technology Letters PhotonicsQuantum ScienceEngineeringLaser SciencePhysics	1996	84
Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors C. Moglestue, J. Rosenzweig, J. Kühl, Journal of Applied Physics Categoryquantum ElectronicsEngineeringGaas Layer ThicknessOptoelectronic DevicesSemiconductor Device	1991	80
Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors M. Klingenstein, J. Kühl, J. Rosenzweig, Solid-State Electronics Electrical EngineeringEngineeringPhotodetectorsApplied PhysicsPhotocurrent Gain Mechanisms	1994	79
Impedance characteristics of quantum-well lasers S. Weisser, I. Esquivias, P.J. Tasker, IEEE Photonics Technology Letters Categoryquantum ElectronicsEngineeringLaser ScienceLaser ApplicationsLaser Physics	1994	65
Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs M. Klingenstein, J. Kühl, R. Nötzel, Applied Physics Letters SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesOptical Materials	1992	42
Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers J.D. Ralston, S. Weisser, K. Eisele, IEEE Photonics Technology Letters PhotonicsLow-bias-current Direct ModulationMillimeter Wave TechnologyGrowth TemperatureRidge-waveguide Lasers	1994	41
Fast semiconductor thermoelectric devices U. Birkholz, R. Fettig, J. Rosenzweig Sensors and Actuators SemiconductorsElectrical EngineeringEngineeringApplied PhysicsElectrothermal	1987	40
Efficient high-speed direct modulation in <i>p</i> -doped In <sub>0.35</sub> Ga <sub>0.65</sub> As/GaAs multiquantum well lasers S. Weisser, J.D. Ralston, E.C. Larkins, Electronics Letters	1992	37

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