Applied Physics Letters · 1991 · 103 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportIon ImplantationOptical Properties Of SemiconductorsRadiation Damage In MaterialsSemiconductor DefectsSemiconductor PhysicsAmorphizationCarrier DynamicsCarrier LifetimeCarrier Recombination DynamicsDefect DensityDevice DegradationPhotoconductivityReflectivity
We investigate the dependence of carrier lifetimes in radiation-damaged, GaAs on proton implantation dose by means of time-resolved reflectivity and photoconductivity experiments with subpicosecond resolution. The carrier lifetimes decrease with increasing implantation dose at low implantation levels whereas beyond the ‘‘amorphization dose’’ a saturation at 0.5 ps can be observed due to a saturation of the defect density.
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Picosecond GaAs-based photoconductive optoelectronic detectors
F. W. Smith, H. Q. Le, V. Diadiuk et al. · Applied Physics Letters · 1989 · 348 citations · Full text
Generation of subpicosecond electrical pulses on coplanar transmission lines
M. B. Ketchen, D. Grischkowsky, T. C. Chen et al. · Applied Physics Letters · 1986 · 232 citations