Applied Physics Letters · 1983 · 566 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsIii-v SemiconductorsLuminescent MaterialsOptical Properties Of SemiconductorsRare-earth-doped MaterialsSemiconductor Device MaterialsWide-bandgap SemiconductorsCrystal-field EffectsLuminescence MechanismsOptical TransitionsPhotoluminescence SpectroscopyRare-earth-doped Luminescent MaterialsSpin-orbit Splitting
Well-resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium-implanted GaP, GaAs, InP, and Si. The optical transitions occur between the weakly crystal field split spin-orbit levels, 4I13/2→4I15/2, of Er3+(4f11). Typical spectral linewidths in GaAs are 2 cm−1(0.25 meV) at 6 K and 11 cm−1(1.36 meV) at room temperature.
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