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1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon
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1983
Year
SemiconductorsPhotonicsElectrical EngineeringOptical MaterialsEngineeringPhotoluminescencePhysicsErbium-implanted GapOptical PropertiesCompound SemiconductorOptoelectronic MaterialsApplied Physics1.54-μM LuminescenceOptoelectronic DevicesLuminescence PropertyOptoelectronicsStructured Luminescence SpectraWeakly Crystal Field
Well-resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium-implanted GaP, GaAs, InP, and Si. The optical transitions occur between the weakly crystal field split spin-orbit levels, 4I13/2→4I15/2, of Er3+(4f11). Typical spectral linewidths in GaAs are 2 cm−1(0.25 meV) at 6 K and 11 cm−1(1.36 meV) at room temperature.
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