Ya‐Hong Xie

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations

Ion Implantation, Optical Materials, Crystalline Silicon +11

Synthesis of the 0D/3D CuO/ZnO Heterojunction with Enhanced Photocatalytic Activity

Linyu Zhu, Hong Li, Zirui Liu et al. · The Journal of Physical Chemistry C · 2018 · 336 citations

Engineering, Inorganic Photochemistry, Synthetic Photochemistry +16

Ultra‐Sensitive Graphene‐Plasmonic Hybrid Platform for Label‐Free Detection

Pu Wang, Owen Liang, Wei Zhang et al. · Advanced Materials · 2013 · 216 citations

Very high mobility two-dimensional hole gas in Si/Ge<i>x</i>Si1−<i>x</i>/Ge structures grown by molecular beam epitaxy

Ya‐Hong Xie, Don Monroe, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1993 · 193 citations

Engineering, Silicon On Insulator, Semiconductor Device +17