D. C. Jacobson

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 619 citations

Engineering, Materials Engineering, Materials Science +17

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

Michael O. Thompson, G. J. Galvin, J. W. Mayer et al. · Physical Review Letters · 1984 · 566 citations

Natural Sciences, Materials Engineering, Materials Science +17

Equilibrium shape of Si

D. J. Eaglesham, Alice E. White, L. C. Feldman et al. · Physical Review Letters · 1993 · 496 citations

Natural Sciences, Materials Science, Physics +14

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations

Engineering, Materials Engineering, Materials Science +17

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

E. P. Donovan, F. Spaepen, David Turnbull et al. · Journal of Applied Physics · 1985 · 410 citations

Natural Sciences, Materials Engineering, Materials Science +17