D. C. Jacobson - Concepedia

Author

D. C. Jacobson

Also Known As

D C Jacobson, D JACOBSON, D Jacobson, D. C. Jacobson, D. Jacobson, D.C Jacobson, D.C. Jacobson, Dale C. Jacobson, Dale Jacobson

281

Publications

11.8K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Oak Ridge National Laboratory Cornell University Harvard University Institute for Atomic and Molecular Physics

About

D. C. Jacobson is an author at AT&T (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	48	120	9.9K
2	Applied Physics	47	123	9.9K
3	Natural Sciences	3	3	537
4	Biomedical Engineering	2	2	93
5	Medicine	1	1	19

D. C. Jacobson

131

Publications

10.3K

Citations

H-Index

Page 1

	Year	Citations
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, Journal of Applied Physics Materials ScienceSemiconductorsSi ImplantsIon ImplantationEngineering	1997	614
Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation Michael O. Thompson, G. J. Galvin, J. W. Mayer, Physical Review Letters Materials ScienceEngineeringEnergy DensitiesLaser-induced BreakdownApplied Physics	1984	566
Equilibrium shape of Si D. J. Eaglesham, Alice E. White, L. C. Feldman, Physical Review Letters Materials ScienceEngineeringNuclear PhysicsPhysicsEquilibrium Shape	1993	494
Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon Jürgen Michel, J. L. Benton, R. F. Ferrante, Journal of Applied Physics Ion ImplantationOptical MaterialsCrystalline SiliconEngineeringPhotoluminescence	1991	417
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation E. P. Donovan, F. Spaepen, David Turnbull, Journal of Applied Physics Materials ScienceAmorphous SiNoble GasEngineeringIon Implantation	1985	409
Structural relaxation and defect annihilation in pure amorphous silicon S. Roorda, W.C. Sinke, J. M. Poate, Physical review. B, Condensed matter Materials ScienceMaterials EngineeringAmorphous SiPoint DefectsEngineering	1991	409
Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diode Bo Zheng, Jürgen Michel, Fang Ren, Applied Physics Letters EngineeringSilicon Light-emitting DiodeInternal F-shell TransitionOptoelectronic DevicesLuminescence Property	1994	334
Heat of crystallization and melting point of amorphous silicon E. P. Donovan, F. Spaepen, David Turnbull, Applied Physics Letters Materials EngineeringMaterials ScienceIon ImplantationEngineeringMelting Temperature	1983	325
On the mechanism of the hydrogen-induced exfoliation of silicon M. K. Weldon, Vittorio Marsico, Yves J. Chabal, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSemiconductorsEngineeringCrystalline DefectsHydrogen Transition	1997	306
Density of amorphous Si J. S. Custer, Michael O. Thompson, D. C. Jacobson, Applied Physics Letters Materials EngineeringMaterials ScienceAmorphous SiLayer ThicknessCrystalline Si	1994	279

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