D. C. Jacobson

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

Michael O. Thompson, G. J. Galvin, J. W. Mayer et al. · Physical Review Letters · 1984 · 566 citations

Materials Science, Engineering, Energy Densities +12

Equilibrium shape of Si

D. J. Eaglesham, Alice E. White, L. C. Feldman et al. · Physical Review Letters · 1993 · 494 citations

Materials Science, Engineering, Nuclear Physics +15

Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon

Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations

Ion Implantation, Optical Materials, Crystalline Silicon +11

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

E. P. Donovan, F. Spaepen, David Turnbull et al. · Journal of Applied Physics · 1985 · 409 citations

Materials Science, Amorphous Si, Noble Gas +13