J. W. Mayer - Concepedia

Author

J. W. Mayer

Cornell University

Also Known As

J Mayer, J W Mayer, J. Mayer, J. W. MAYER, J. W. Mayer, J.W Mayer, J.W. MAYER, J.W. Mayer, J�rg Mayer, Mayer, JamesM.

694

Publications

25.1K

Citations

H-Index

190

Concepts

All Affiliations

Cornell University California Institute of Technology Arizona State University IBM Research - Thomas J. Watson Research Center HRL Laboratories (United States)

About

J. W. Mayer is an author at Cornell University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	79	351	21.7K
2	Natural Sciences	24	35	2.3K
3	Medicine	4	4	92
4	Education	1	1	17
5	Health Sciences	1	1	32

J. W. Mayer

379

Publications

22.6K

Citations

H-Index

Page 1

	Year	Citations
Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si L. Csepregi, Eamonn Kennedy, J. W. Mayer, Journal of Applied Physics EngineeringCrystal Growth TechnologySilicon On InsulatorGrowth RateEpitaxial Regrowth Rate	1978	583
Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation Michael O. Thompson, G. J. Galvin, J. W. Mayer, Physical Review Letters Materials ScienceEngineeringEnergy DensitiesLaser-induced BreakdownApplied Physics	1984	566
Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions L. Csepregi, Eamonn Kennedy, T. J. Gallagher, Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductorsIon Implantation	1977	442
Principles and applications of ion beam techniques for the analysis of solids and thin films Wei Chu, J. W. Mayer, M‐A. Nicolet, Thin Solid Films Materials ScienceIon ImplantationEngineeringSurface ScienceApplied Physics	1973	331
Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers Eamonn Kennedy, L. Csepregi, J. W. Mayer, Journal of Applied Physics EngineeringCrystal Growth TechnologySolid-state ChemistryIntegrated CircuitsSilicon On Insulator	1977	322
Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures J. W. Mayer, B-Y. Tsaur, S. S. Lau, Nuclear Instruments and Methods Materials ScienceIon ImplantationEngineeringApplied PhysicsIon Beam	1981	297
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering J. W. Mayer, L. Eriksson, S. T. Picraux, Canadian Journal of Physics EngineeringGermanium LatticeSilicon On InsulatorLattice AtomsSemiconductors	1968	277
ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING John Davies, J. Denhartog, L. Eriksson, Canadian Journal of Physics Materials ScienceSemiconductorsIon ImplantationSb ImplantsEngineering	1967	274
Ion beams in silicon processing and characterization Eric Chason, S. T. Picraux, J. M. Poate, Journal of Applied Physics Materials EngineeringElectrical EngineeringIon ImplantationEngineeringMicrofabrication	1997	271
Implanted noble gas atoms as diffusion markers in silicide formation Wei Chu, S.S. Lau, J. W. Mayer, Thin Solid Films Ion ImplantationEngineeringPhysicsNatural SciencesApplied Physics	1975	266

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