J. W. Mayer

Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

L. Csepregi, Eamonn Kennedy, J. W. Mayer et al. · Journal of Applied Physics · 1978 · 585 citations

Natural Sciences, Materials Engineering, Materials Science +17

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

Michael O. Thompson, G. J. Galvin, J. W. Mayer et al. · Physical Review Letters · 1984 · 566 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions

L. Csepregi, Eamonn Kennedy, T. J. Gallagher et al. · Journal of Applied Physics · 1977 · 443 citations

Engineering, Materials Engineering, Materials Science +17

Principles and applications of ion beam techniques for the analysis of solids and thin films

J. W. Mayer, M‐A. Nicolet, T.M. Buck et al. · Thin Solid Films · 1973 · 332 citations

Natural Sciences, Materials Science, Physics +12

Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers

Eamonn Kennedy, L. Csepregi, J. W. Mayer et al. · Journal of Applied Physics · 1977 · 324 citations

Natural Sciences, Materials Engineering, Materials Science +17