G. J. Galvin

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

Michael O. Thompson, G. J. Galvin, J. W. Mayer et al. · Physical Review Letters · 1984 · 566 citations

Materials Science, Engineering, Energy Densities +12

Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of Si

G. J. Galvin, Michael O. Thompson, J. W. Mayer et al. · Physical Review Letters · 1982 · 165 citations

Materials Science, Sample Conductance, Optical Materials +14

Co/GaAs interfacial reactions

C. J. Palmstro m, C. C. Chang, A. J. Yu et al. · Journal of Applied Physics · 1987 · 70 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +14

Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerations

G. J. Galvin, J. W. Mayer, P. S. Peercy · Applied Physics Letters · 1985 · 61 citations

Observed Kinetics, Engineering, Laser Applications +22

Melt dynamics of silicon-on-sapphire during pulsed laser annealing

Michael O. Thompson, G. J. Galvin, J. W. Mayer et al. · Applied Physics Letters · 1983 · 59 citations

Electrical Engineering, Optical Materials, Melt Depths +15