M‐A. Nicolet - Concepedia

Author

M‐A. Nicolet

Also Known As

M -A Nicolet, M -A. Nicolet, M-A Nicolet, M-A. NICOLET, M-A. Nicolet, M. -A. Nicolet, M. A. Nicolet, M. Nicolet, M.-A Nicolet, M.-A. Nicolet

225

Publications

6.7K

Citations

H-Index

Concepts

All Affiliations

California Institute of Technology University of California San Diego Rockwell Automation (United States)

About

M‐A. Nicolet is an author at California Institute of Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	104	5.2K
2	Applied Physics	38	100	5.1K
3	Natural Sciences	11	11	494
4	Education	3	3	49
5	Biology	1	1	125

M‐A. Nicolet

115

Publications

5.7K

Citations

H-Index

Page 1

	Year	Citations
When is thermodynamics relevant to ion-induced atomic rearrangements in metals? W. L. Johnson, Yang‐Tse Cheng, Mark C. W. van Rossum, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms EngineeringPhysicsApplied PhysicsMetallurgical InteractionAtomic Physics	1985	443
Principles and applications of ion beam techniques for the analysis of solids and thin films Wei Chu, J. W. Mayer, M‐A. Nicolet, Thin Solid Films Materials ScienceIon ImplantationEngineeringSurface ScienceApplied Physics	1973	331
Structural difference rule for amorphous alloy formation by ion mixing Baixin Liu, William L. Johnson, M‐A. Nicolet, Applied Physics Letters EngineeringStructural Difference RuleAmorphization MechanismAmorphous MaterialsMultilayered Samples	1983	242
Tantalum-based diffusion barriers in Si/Cu VLSI metallizations E. Kolawa, Jen‐Sue Chen, J.S. Reid, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringCu OverlayersEngineering	1991	222
Influence of chemical driving forces in ion mixing of metallic bilayers Yang‐Tse Cheng, Mark C. W. van Rossum, M‐A. Nicolet, Applied Physics Letters EngineeringChemical DepositionIon ProcessIon ImplantationTransport Phenomena	1984	186
Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉\|Cu metallizations J.S. Reid, E. Kolawa, R. Ruiz, Thin Solid Films	1993	164
Low-temperature ion-beam mixing in metals S. -J. Kim, M‐A. Nicolet, R. S. Averback, Physical review. B, Condensed matter Materials ScienceIon ImplantationTracer ImpuritiesLow-temperature Ion-beam MixingEngineering	1988	153
Kinetics of TiSi2 formation by thin Ti films on Si L. S. Hung, J. Gyulai, J. W. Mayer, Journal of Applied Physics EngineeringSilicon On InsulatorTisi2 FormationSiliceneSilicide Formation	1983	152
Compensating impurity effect on epitaxial regrowth rate of amorphized Si I. Suni, G. Göltz, M. G. Grimaldi, Applied Physics Letters Materials ScienceSemiconductorsIon ImplantationImpurity EffectEngineering	1982	128
Identification of the dominant diffusing species in silicide formation Wei Chu, H. Kräutle, J. W. Mayer, Applied Physics Letters X-ray SpectroscopyEngineeringChemistryDiffusion MarkersPhylogenetics	1974	125

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