J. C. Bean

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Engineering, Severe Plastic Deformation, Energy Balance +20

Band alignments of coherently strained Ge<i>x</i>Si1−<i>x</i>/Si heterostructures on 〈001〉 Ge<i>y</i>Si1−<i>y</i> substrates

R. People, J. C. Bean · Applied Physics Letters · 1986 · 316 citations

Oxide Heterostructures, Semiconductors, Materials Science +15

Measurement of the band gap of Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

D. V. Lang, R. People, J. C. Bean et al. · Applied Physics Letters · 1985 · 311 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures

R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations

Oxide Heterostructures, Semiconductors, Materials Science +11

Pseudomorphic growth of Ge<i>x</i>Si1−<i>x</i> on silicon by molecular beam epitaxy

J. C. Bean, T. T. Sheng, L. C. Feldman et al. · Applied Physics Letters · 1984 · 229 citations

Materials Science, Semiconductors, Rutherford Ion +13