J. C. Bean - Concepedia

Author

J. C. Bean

AT&T (United States)

Also Known As

Bean, J.C., J Bean, J. Bean, J. C. Bean, J.C Bean, J.C. BEAN, J.C. Bean, Joe Bean

Publications

5.1K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Alcatel Lucent (Germany)Nokia (United States)Princeton University The University of Texas at Austin

About

J. C. Bean is an author at AT&T (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	35	4.7K
2	Applied Physics	25	35	4.6K
3	Materials Engineering	6	6	2K
4	Electrical Engineering	3	3	230
5	Chemistry	2	2	33

J. C. Bean

Publications

4.9K

Citations

H-Index

Page 1

	Year	Citations
Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures R. People, J. C. Bean Applied Physics Letters EngineeringSevere Plastic DeformationEnergy BalanceMechanical EngineeringMicrostructure-strength Relationship	1985	1.7K
Band alignments of coherently strained Ge<i>x</i>Si1−<i>x</i>/Si heterostructures on 〈001〉 Ge<i>y</i>Si1−<i>y</i> substrates R. People, J. C. Bean Applied Physics Letters Oxide HeterostructuresSemiconductorsMaterials ScienceEngineeringPhysics	1986	316
Measurement of the band gap of Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures D. V. Lang, R. People, J. C. Bean, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesBand GapSemiconductor Nanostructures	1985	311
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures R. People, J. C. Bean, D. V. Lang, Applied Physics Letters Oxide HeterostructuresSemiconductorsMaterials ScienceHole GasEngineering	1984	302
Pseudomorphic growth of Ge<i>x</i>Si1−<i>x</i> on silicon by molecular beam epitaxy J. C. Bean, T. T. Sheng, L. C. Feldman, Applied Physics Letters Materials ScienceSemiconductorsRutherford IonEpitaxial GrowthEngineering	1984	229
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon J. C. Bean, G. E. Becker, P. M. Petroff, Journal of Applied Physics Materials ScienceIon ImplantationEngineeringCrystalline DefectsAr+ Sputter Cleaning	1977	183
Dislocation nucleation near the critical thickness in GeSi/Si strained layers D. J. Eaglesham, E. P. Kvam, D. M. Maher, Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties	1989	158
Stability of semiconductor strained-layer superlattices R. Hull, J. C. Bean, F. Cerdeira, Applied Physics Letters Materials ScienceSemiconductor SuperlatticesEngineeringDislocation InteractionPhysics	1986	155
Commensurate and incommensurate structures in molecular beam epitaxially grown Ge<i>x</i>Si1−<i>x</i>films on Si(100) A. T. Fiory, J. C. Bean, L. C. Feldman, Journal of Applied Physics Materials ScienceEpitaxial GrowthIncommensurate StructuresEngineeringDislocation Interaction	1984	141
Direct observation of potential distribution across Si/Si <i>p</i>-<i>n</i> junctions using off-axis electron holography Martha R. McCartney, David J. Smith, R. Hull, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesPotential Distribution	1994	132

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