P. J. Silvėrman - Concepedia

Author

P. J. Silvėrman

Also Known As

P J Silverman, P Silverman, P. J. SILVERMAN, P. J. Silverman, P. J. Silvėrman, P. Silverman, P.J Silverman, P.J. Silverman, Paul J. Silverman, Paul J. Silverman Paul J. Silverman

150

Publications

6.6K

Citations

H-Index

105

Concepts

All Affiliations

AT&T (United States)Rutgers, The State University of New Jersey Alcatel Lucent (Germany)

About

P. J. Silvėrman is an author at AT&T (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	41	83	5.9K
2	Applied Physics	39	73	5.2K
3	Natural Sciences	8	8	547
4	Medicine	2	2	423
5	Chemical Engineering	1	1	104

P. J. Silvėrman

Publications

6.1K

Citations

H-Index

Page 1

	Year	Citations
Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Optical MaterialsEngineeringOptoelectronic DevicesRelaxed BuffersSemiconductor Nanostructures	1992	532
Scanning tunneling microscope instrumentation Y. Kuk, P. J. Silvėrman Review of Scientific Instruments EngineeringMicroscopyElectronic DesignBasic Operating PrinciplesTunneling Microscopy	1989	285
Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain Ya Xie, George H. Gilmer, Christopher Roland, Physical Review Letters EngineeringThin Film Process TechnologySemiconductorsSemiconductor Surface RoughnessBulk Strain	1994	255
Ultra-thin gate dielectrics: they break down, but do they fail? B. E. Weir, P. J. Silvėrman, D. Monroe, Electrical EngineeringSemiconductor DeviceEngineeringPhysicsNanoelectronics	2002	205
Oxygen chemisorption on Cu(110): An atomic view by scanning tunneling microscopy F. M. Chua, Y. Kuk, P. J. Silvėrman Physical Review Letters Materials ScienceSurface CharacterizationEngineeringBuckled-row ModelSurface Chemistry	1989	198
Reconstruction of the W (001) Surface and Its Reordering by Hydrogen Adsorption, Studied by MeV Ion Scattering I. Stensgaard, L. C. Feldman, P. J. Silvėrman Physical Review Letters High-energy IonNuclear PhysicsEngineeringClean WHydrogen Adsorption	1979	194
Very high mobility two-dimensional hole gas in Si/Ge<i>x</i>Si1−<i>x</i>/Ge structures grown by molecular beam epitaxy Ya‐Hong Xie, Don Monroe, Eugene A. Fitzgerald, Applied Physics Letters EngineeringSilicon On InsulatorSemiconductor DeviceSemiconductor NanostructuresNanoelectronics	1993	193
Surface morphology of related Ge<i>x</i>Si1−<i>x</i> films Julia W. P. Hsu, Eugene A. Fitzgerald, Ya‐Hong Xie, Applied Physics Letters EngineeringSevere Plastic DeformationShallow DepressionsThin Film Process TechnologyMicrostructure-strength Relationship	1992	175
Calculation of the backscattering-channeling surface peak I. Stensgaard, L. C. Feldman, P. J. Silvėrman Surface Science RadarEngineeringSynthetic Aperture RadarCalibrationAntenna	1978	161
O chemisorption on Cu(110) by scanning tunneling microscopy Y. Kuk, F. M. Chua, P. J. Silvėrman, Physical review. B, Condensed matter Materials ScienceSurface CharacterizationChemisorbed OxygenEngineeringSurface Chemistry	1990	154

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