P. J. Silvėrman

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Scanning tunneling microscope instrumentation

Y. Kuk, P. J. Silvėrman · Review of Scientific Instruments · 1989 · 285 citations

Engineering, Microscopy, Electronic Design +17

Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain

Ya Xie, George H. Gilmer, Christopher Roland et al. · Physical Review Letters · 1994 · 255 citations

Engineering, Thin Film Process Technology, Semiconductors +16

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Oxygen chemisorption on Cu(110): An atomic view by scanning tunneling microscopy

F. M. Chua, Y. Kuk, P. J. Silvėrman · Physical Review Letters · 1989 · 198 citations

Materials Science, Surface Characterization, Engineering +12