K.S. Krisch

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

M. L. Green, D. Brasen, K. Evans‐Lutterodt et al. · Applied Physics Letters · 1994 · 135 citations

Materials Science, Oxide Heterostructures, Chemical Engineering +13

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 1998 · 134 citations

Electrical Engineering, Ion Implantation, Engineering +14

Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

S. D. Kosowsky, P. S. Pershan, K.S. Krisch et al. · Applied Physics Letters · 1997 · 83 citations · Full text

Materials Engineering, Materials Science, Epitaxial Growth +14

Gate capacitance attenuation in MOS devices with thin gate dielectrics

K.S. Krisch, J. Bude, L. Manchanda · IEEE Electron Device Letters · 1996 · 76 citations

Device Modeling, Electrical Engineering, Gate Capacitance +11