Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green, +5

Applied Physics Letters

Materials ScienceSemiconductorsDislocation DensitiesEngineeringBulk Gexsi1−x +13

Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films

M. L. Green, M. E. Gross, Letizia Papa, +2

Journal of The Electrochemical Society

Materials ScienceMaterial AnalysisEngineeringRuthenium Dioxide FilmsExcellent Adhesion +10

A model for the FCC→HCP transformation, its applications, and experimental evidence

S. Mahajan, M. L. Green, D. Brasen

Metallurgical Transactions A

EngineeringExperimental EvidencePhysicsRadio EngineeringComputer Engineering +2

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

M. L. Green, D. Brasen, K. Evans‐Lutterodt, +6

Applied Physics Letters

Materials ScienceOxide HeterostructuresChemical EngineeringEngineeringRapid Thermal Oxidation +11

High resolution ion scattering study of silicon oxynitridation

Hongcheng Lu, E. P. Gusev, T. Gustafsson, +4

Applied Physics Letters

Ion ImplantationEngineeringPhysicsNanotechnologyNanoelectronics +13

A model for the formation of stacking faults in silicon

S. Mahajan, G. A. Rozgonyi, D. Brasen

Applied Physics Letters

Materials EngineeringDefect ToleranceUnified MannerEngineeringDislocation Interaction +13

Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

S. D. Kosowsky, P. S. Pershan, K.S. Krisch, +5

Applied Physics Letters

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringPhysics +12

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

M. L. Green, B. E. Weir, D. Brasen, +5

Journal of Applied Physics

EngineeringSemiconductor MaterialsSemiconductor DeviceSemiconductorsStrain Gradient +15

The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide

E. P. Gusev, Hongcheng Lu, T. Gustafsson, +3

Journal of Applied Physics

Materials EngineeringMaterials ScienceEngineeringNanotechnologyNanoelectronics +13

Magnetic and crystallographic properties of spinels of the type AxB2S4 where A = Al, Ga, and B = Mo, V, Cr

D. Brasen, J. M. Vandenberg, M. Robbins, +4

Journal of Solid State Chemistry

Materials ScienceMagnetismMagnetic PropertiesCrystal StructureEngineering +10