D. Brasen

Totally relaxed Ge<i>x</i>Si1−<i>x</i> layers with low threading dislocation densities grown on Si substrates

Eugene A. Fitzgerald, Y. H. Xie, M. L. Green et al. · Applied Physics Letters · 1991 · 687 citations

Materials Science, Semiconductors, Dislocation Densities +15

Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films

M. L. Green, M. E. Gross, Letizia Papa et al. · Journal of The Electrochemical Society · 1985 · 233 citations

Materials Science, Material Analysis, Engineering +12

A model for the FCC→HCP transformation, its applications, and experimental evidence

S. Mahajan, M. L. Green, D. Brasen · Metallurgical Transactions A · 1977 · 164 citations

Engineering, Experimental Evidence, Physics +4

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

M. L. Green, D. Brasen, K. Evans‐Lutterodt et al. · Applied Physics Letters · 1994 · 135 citations

Materials Science, Oxide Heterostructures, Chemical Engineering +13

High resolution ion scattering study of silicon oxynitridation

Hongcheng Lu, E. P. Gusev, T. Gustafsson et al. · Applied Physics Letters · 1996 · 100 citations

Ion Implantation, Engineering, Physics +15