Applied Physics Letters · 1996 · 100 citations · 0 references
Ion ImplantationEngineeringPhysicsNanotechnologyNanoelectronicsSurface ScienceApplied PhysicsNatural SciencesOxide ElectronicsHigh Resolution IonUltrathin Silicon OxynitridesSemiconductor Device FabricationChemistryIon EmissionSilicon On InsulatorMicroelectronicsN2o ResultsNitrogen Distribution
High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case.