Daniel M. Fleetwood - Concepedia

Author

Daniel M. Fleetwood

Also Known As

D Fleetwood, D M Fleetwood, D Schmidt, D. Fleetwood, D. M. FLEETWOOD, D. M. Fleetwood, D.M Fleetwood, D.M. FLEETWOOD, D.M. Fleetwood, Dan Fleetwood

765

Publications

25.1K

Citations

H-Index

189

Concepts

All Affiliations

Vanderbilt University Sandia National Laboratories Sandia National Laboratories California IMEC Oak Ridge National Laboratory

About

Daniel M. Fleetwood is an author at Vanderbilt University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	82	397	22.3K
2	Medicine	30	41	2.6K
3	Health Sciences	11	11	815
4	Education	3	3	117
5	Business	1	1	27

Daniel M. Fleetwood

422

Publications

23.1K

Citations

H-Index

Page 1

	Year	Citations
Radiation Effects in MOS Oxides James R. Schwank, M.R. Shaneyfelt, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Hafnium OxidesElectrical EngineeringElectronic DevicesRadiation-induced Charge BuildupEngineering	2008	901
Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices Daniel M. Fleetwood, P.S. Winokur, R.A. Reber, Journal of Applied Physics EngineeringIntegrated CircuitsDefect ToleranceOxide TrapsSemiconductor Device	1993	494
Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices Daniel M. Fleetwood IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsRadiation PhysicsRadiation ExposureRadiation Protection	2013	355
'Border traps' in MOS devices Daniel M. Fleetwood IEEE Transactions on Nuclear Science EngineeringOxide ChargesBorder TrapsDefect ToleranceSemiconductor Device	1992	341
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringPhysicsStress-induced Leakage Current	1994	280
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices M.R. Shaneyfelt, Daniel M. Fleetwood, J.R. Schwank, IEEE Transactions on Nuclear Science X-ray SpectroscopyNuclear PhysicsEngineeringRadiation PhysicsX-ray Imaging	1991	242
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments Daniel M. Fleetwood, P.S. Winokur, J.R. Schwank IEEE Transactions on Nuclear Science EngineeringSpace EnvironmentRadiation EnergyRadiation ExposureIntegrated Circuits	1988	209
Charge separation for bipolar transistors S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin, IEEE Transactions on Nuclear Science EngineeringNet Positive OxideRadiation EffectCharge TransportSemiconductor Device	1993	199
1/f noise and radiation effects in MOS devices Daniel M. Fleetwood, T.L. Meisenheimer, John H. Scofield IEEE Transactions on Electron Devices Trap EnergyElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	1994	197
Physical model for enhanced interface-trap formation at low dose rates Sergey N. Rashkeev, C.R. Cirba, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Electrical EngineeringBipolar DevicesEngineeringPhysicsNanoelectronics	2002	193

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