Daniel M. Fleetwood

Radiation Effects in MOS Oxides

James R. Schwank, M.R. Shaneyfelt, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2008 · 935 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices

Daniel M. Fleetwood, P.S. Winokur, R.A. Reber et al. · Journal of Applied Physics · 1993 · 500 citations

Engineering, Electrical Engineering, Materials Science +17

Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

Daniel M. Fleetwood · IEEE Transactions on Nuclear Science · 2013 · 369 citations

Medicine, Electrical Engineering, Nuclear Engineering +14

'Border traps' in MOS devices

Daniel M. Fleetwood · IEEE Transactions on Nuclear Science · 1992 · 348 citations

Engineering, Electrical Engineering, Materials Science +17

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1994 · 283 citations

Engineering, Diagnostic Sciences, Radiation Measurement +15