P.S. Winokur

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

P. J. McWhorter, P.S. Winokur · Applied Physics Letters · 1986 · 764 citations · Full text

Engineering, Trapped-oxide Charge, Semiconductor Device +16

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices

Daniel M. Fleetwood, P.S. Winokur, R.A. Reber et al. · Journal of Applied Physics · 1993 · 494 citations

Engineering, Integrated Circuits, Defect Tolerance +18

Correlating the Radiation Response of MOS Capacitors and Transistors

P.S. Winokur, J.R. Schwank, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 415 citations

Electrical Engineering, New Technique, Engineering +11

Physical Mechanisms Contributing to Device "Rebound"

J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 358 citations

Electrical Engineering, Ion Implantation, Engineering +13

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1994 · 280 citations

Electrical Engineering, Semiconductor Device, Engineering +13