IEEE Transactions on Nuclear Science · 1984 · 360 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsRadiation PhysicsSemiconductor DevicesRadiation Damage In MaterialsRadiation Interaction With MatterSurface PassivationAnnealing EffectsCharge TrappingInterface StatesInterface Trap StatesIrradiation DamageRadiation EffectsRadiation-induced Charge TrappingThreshold Voltage
The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.
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