D. C. Turpin

Correlating the Radiation Response of MOS Capacitors and Transistors

P.S. Winokur, J.R. Schwank, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 417 citations

Engineering, Electrical Engineering, Microelectronics +15

Physical Mechanisms Contributing to Device "Rebound"

J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 360 citations

Engineering, Electrical Engineering, Materials Science +14

The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices

J.R. Schwank, Daniel M. Fleetwood, P.S. Winokur et al. · IEEE Transactions on Nuclear Science · 1987 · 113 citations

Engineering, Electrical Engineering, Materials Science +17

A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors

Daniel M. Fleetwood, P. V. Dressendorfer, D. C. Turpin · IEEE Transactions on Nuclear Science · 1987 · 103 citations

Engineering, Electrical Engineering, Microelectronics +16

Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing

P.S. Winokur, F.W. Sexton, J.R. Schwank et al. · IEEE Transactions on Nuclear Science · 1986 · 100 citations

Engineering, Computer Engineering, Fault Tolerance +12