P. J. McWhorter

Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors

P. J. McWhorter, P.S. Winokur · Applied Physics Letters · 1986 · 764 citations · Full text

Engineering, Trapped-oxide Charge, Semiconductor Device +16

Physics of the ferroelectric nonvolatile memory field effect transistor

S. L. Miller, P. J. McWhorter · Journal of Applied Physics · 1992 · 494 citations

Device Modeling, Memory Operation, Electrical Engineering +11

Correlating the Radiation Response of MOS Capacitors and Transistors

P.S. Winokur, J.R. Schwank, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 415 citations

Electrical Engineering, New Technique, Engineering +11

Physical Mechanisms Contributing to Device "Rebound"

J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 358 citations

Electrical Engineering, Ion Implantation, Engineering +13

Modeling the anneal of radiation-induced trapped holes in a varying thermal environment

P. J. McWhorter, S. L. Miller, W.M. Miller · IEEE Transactions on Nuclear Science · 1990 · 216 citations · Full text

Radiative Heat Transfer, Engineering, Thermal Radiation +21