Applied Physics Letters · 1986 · 774 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsRadiation PhysicsSemiconductor DevicesCarrier TransportCmos Circuit DesignField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesCharge TrappingInterface Trap DensityInterface Trap StatesInterface TrapsMetal-semiconductor Field-effect TransistorsOxide ChargeThreshold VoltageTraps
A new technique is presented for separating the threshold-voltage shift of a metal-oxide-semiconductor transistor into shifts due to interface traps and trapped-oxide charge. This technique is applied to threshold-voltage shifts on an n-channel transistor that result from ionizing radiation.
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