J.R. Schwank - Concepedia

Author

J.R. Schwank

Sandia National Laboratories

Also Known As

J. R. SCHWANK, J. R. Schwank, J. Schwank, J.R Schwank, J.R. Schwank, Jim R. Schwank, Schwank, J. R.

194

Publications

10.8K

Citations

H-Index

135

Concepts

All Affiliations

Sandia National Laboratories Sandia National Laboratories California Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA DAM Île-de-France Vanderbilt University

About

J.R. Schwank is an author at Sandia National Laboratories specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	55	120	9.7K
2	Medicine	17	18	1.1K
3	Natural Sciences	11	12	787
4	Health Sciences	9	9	1.3K
5	Education	4	4	149

J.R. Schwank

129

Publications

10.6K

Citations

H-Index

Page 1

	Year	Citations
Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices Daniel M. Fleetwood, P.S. Winokur, R.A. Reber, Journal of Applied Physics EngineeringIntegrated CircuitsDefect ToleranceOxide TrapsSemiconductor Device	1993	494
Radiation effects in SOI technologies J.R. Schwank, V. Ferlet-Cavrois, M.R. Shaneyfelt, IEEE Transactions on Nuclear Science EngineeringBipolar AmplificationBody TiesSilicon On InsulatorDevice Design Techniques	2003	430
Correlating the Radiation Response of MOS Capacitors and Transistors P.S. Winokur, J.R. Schwank, P. J. McWhorter, IEEE Transactions on Nuclear Science Electrical EngineeringNew TechniqueEngineeringRadiation DetectionMos Transistor	1984	415
Device modeling of ferroelectric capacitors S. L. Miller, R.D. Nasby, J.R. Schwank, Journal of Applied Physics Device ModelingElectrical EngineeringDielectric LayerEngineeringFerroelectric Application	1990	380
Physical Mechanisms Contributing to Device "Rebound" J.R. Schwank, P.S. Winokur, P. J. McWhorter, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringPhysicsMechanics	1984	358
Current and Future Challenges in Radiation Effects on CMOS Electronics P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, IEEE Transactions on Nuclear Science EngineeringVlsi DesignComputer ArchitectureTotal Dose ToleranceElectromagnetic Compatibility	2010	353
Production and propagation of single-event transients in high-speed digital logic ICs P.E. Dodd, M.R. Shaneyfelt, J. Félix, IEEE Transactions on Nuclear Science Hardware SecurityElectrical EngineeringEngineeringVlsi DesignVlsi Architecture	2004	328
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices M.R. Shaneyfelt, Daniel M. Fleetwood, J.R. Schwank, IEEE Transactions on Nuclear Science X-ray SpectroscopyNuclear PhysicsEngineeringRadiation PhysicsX-ray Imaging	1991	242
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments Daniel M. Fleetwood, P.S. Winokur, J.R. Schwank IEEE Transactions on Nuclear Science EngineeringSpace EnvironmentRadiation EnergyRadiation ExposureIntegrated Circuits	1988	209
Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions S. L. Miller, J.R. Schwank, R.D. Nasby, Journal of Applied Physics Electrical EngineeringFerroelasticsFerroelectric CapacitorFerroelectric ApplicationHysteresis	1991	207

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