V. Ferlet-Cavrois

Radiation effects in SOI technologies

J.R. Schwank, V. Ferlet-Cavrois, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 2003 · 430 citations

Engineering, Bipolar Amplification, Body Ties +17

Single Event Transients in Digital CMOS—A Review

V. Ferlet-Cavrois, L. W. Massengill, Pascale Gouker · IEEE Transactions on Nuclear Science · 2013 · 383 citations

Engineering, Computer Architecture, Fault Tolerance +18

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin et al. · IEEE Transactions on Nuclear Science · 2006 · 151 citations

Engineering, Nuclear Physics, Vlsi Design +22

New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening

V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow et al. · IEEE Transactions on Nuclear Science · 2007 · 151 citations

Electrical Engineering, Single Event Transients, Engineering +12

Worst-case bias during total dose irradiation of SOI transistors

V. Ferlet-Cavrois, T. Colladant, Philippe Paillet et al. · IEEE Transactions on Nuclear Science · 2000 · 134 citations · Full text

Electrical Engineering, Charge Trapping, Total Dose Irradiation +7