T. Colladant

Worst-case bias during total dose irradiation of SOI transistors

V. Ferlet-Cavrois, T. Colladant, Philippe Paillet et al. · IEEE Transactions on Nuclear Science · 2000 · 136 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

Study of transient current induced by heavy-ion in NMOS/SOI transistors

T. Colladant, O. Flament, A. L’Hoir et al. · IEEE Transactions on Nuclear Science · 2002 · 48 citations

Engineering, Electrical Engineering, Circuit Theory +16

Monte-Carlo simulations of ion track in silicon and influence of its spatial distribution on single event effects

T. Colladant, A. L’Hoir, J. E. Sauvestre et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2006 · 25 citations

Engineering, Nuclear Engineering, Physics +17

Single Event Upsets Induced by a few MeV Neutrons in SRAMs and FPGAs

Damien Lambert, Francois Desnoyers, Didier Thouvenot et al. · 2017 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +17

Characterization of the parasitic bipolar transistor in SOI technology: comparison between direct and indirect triggering techniques

O. Flament, O. Musseau, V. Ferlet-Cavrois et al. · 2002 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +16