O. Flament

Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

C. Brisset, V. Ferlet-Cavrois, O. Flament et al. · IEEE Transactions on Nuclear Science · 1996 · 92 citations

Device Modeling, Electrical Engineering, Conventional Nmosfet +13

Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

V. Ferlet-Cavrois, Gilles Gasiot, C. Marcandella et al. · IEEE Transactions on Nuclear Science · 2002 · 89 citations

Dose-rate Irradiations, Engineering, Bipolar Amplification +16

Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation

M. Ceschia, A. Paccagnella, Simone Sandrin et al. · IEEE Transactions on Nuclear Science · 2000 · 76 citations

Electrical Engineering, Ion Implantation, Engineering +15

Total dose induced latch in short channel NMOS/SOI transistors

V. Ferlet-Cavrois, Sébastien Quoizola, O. Musseau et al. · IEEE Transactions on Nuclear Science · 1998 · 58 citations

Device Modeling, Latch Effect, Electrical Engineering +10

Bias dependence of FD transistor response to total dose irradiation

O. Flament, A. Torres, V. Ferlet-Cavrois · IEEE Transactions on Nuclear Science · 2003 · 58 citations

Engineering, Radiation Effect, Radiation Exposure +19