O. Musseau - Concepedia

Author

O. Musseau

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

O Musseau, O. Musseau, Olivier MUSSEAU, Olivier Musseau

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA DAM Île-de-France CEA Grenoble United States Naval Research Laboratory Laboratoire d'Électronique des Technologies de l'Information

About

O. Musseau is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in applied physics, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	29	1.3K
2	Applied Physics	18	25	1.2K
3	Natural Sciences	4	4	212
4	Education	2	2	131
5	Medicine	2	2	83

O. Musseau

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Worst-case bias during total dose irradiation of SOI transistors V. Ferlet-Cavrois, T. Colladant, Philippe Paillet, IEEE Transactions on Nuclear Science Electrical EngineeringCharge TrappingTotal Dose IrradiationBuried OxideEngineering	2000	134
Single-event effects in SOI technologies and devices O. Musseau IEEE Transactions on Nuclear Science Event-driven ArchitectureEngineeringVlsi DesignSingle-event EffectsComputer Architecture	1996	113
Heavy ion and proton-induced single event multiple upset Robert A. Reed, Martin A. Carts, Paul W. Marshall, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsLogic StatesComputer ArchitectureHeavy Ion	1997	103
Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor C. Brisset, V. Ferlet-Cavrois, O. Flament, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringConventional NmosfetEngineeringSemiconductor Device	1996	92
Impact of ion energy on single-event upset P.E. Dodd, O. Musseau, M.R. Shaneyfelt, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringVlsi DesignPhysicsBias Temperature Instability	1998	90
Analysis of multiple bit upsets (MBU) in CMOS SRAM O. Musseau, F. Gardic, Ph. Roche, IEEE Transactions on Nuclear Science Electrical EngineeringCmos SramEngineeringPhysicsMultiple Bit Upsets	1996	78
From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena J.L. Leray, E. Dupont-Nivet, O. Musseau, IEEE Transactions on Nuclear Science EngineeringVlsi DesignDose RateIntegrated CircuitsSilicon On Insulator	1988	71
Total dose induced latch in short channel NMOS/SOI transistors V. Ferlet-Cavrois, Sébastien Quoizola, O. Musseau, IEEE Transactions on Nuclear Science Device ModelingLatch EffectElectrical EngineeringTotal Dose IrradiationEngineering	1998	58
A study of radiation vulnerability of ferroelectric material and devices Yves‐Marie Coïc, O. Musseau, J.L. Leray IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsRadiation Materials ScienceRadiation PhysicsRadiation Systems	1994	51
Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors O. Musseau, V. Ferlet-Cavrois, J.L. Pelloie, IEEE Transactions on Nuclear Science Electrical EngineeringSeu SensitivitySingle TransistorsEngineeringPhysics	2000	51

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