P.E. Dodd - Concepedia

Author

P.E. Dodd

Also Known As

Boratories, Dodd, P., Dodd, P.E., Dodd, Paul E.; Black, J. D.; Ball, D. R., II; Warren, K. M.; Schrimpf, R. D.; Black, D. A.; Reed, R. A.; Fleetwood, D. M.; Robinson, W. H.; Haddad, N. F.; Tipton, A. D., Dodd, Paul Emerson; Shaneyfelt, Marty R; Flores, Richard S.; Jorgensen, J. L.; Schwank, James Ralph; Hill, Thomas A.; Swanson, Scot E., John Conley, P. Dodd, P. E. D. Dodd, P. E. DODD, P. E. Dodd

215

Publications

9.6K

Citations

H-Index

127

Concepts

All Affiliations

Sandia National Laboratories Sandia National Laboratories California Vanderbilt University Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA DAM Île-de-France

About

P.E. Dodd is an author at Sandia National Laboratories specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	49	100	9K
2	Natural Sciences	19	23	1.4K
3	Health Sciences	6	6	773
4	Medicine	6	6	307
5	Education	1	1	24

P.E. Dodd

106

Publications

9.4K

Citations

H-Index

Page 1

	Year	Citations
Basic mechanisms and modeling of single-event upset in digital microelectronics P.E. Dodd, L. W. Massengill IEEE Transactions on Nuclear Science EngineeringComputer ArchitectureBasic MechanismsIntegrated CircuitsHardware Security	2003	1.1K
Radiation Effects in MOS Oxides James R. Schwank, M.R. Shaneyfelt, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Hafnium OxidesElectrical EngineeringElectronic DevicesRadiation-induced Charge BuildupEngineering	2008	901
Radiation effects in SOI technologies J.R. Schwank, V. Ferlet-Cavrois, M.R. Shaneyfelt, IEEE Transactions on Nuclear Science EngineeringBipolar AmplificationBody TiesSilicon On InsulatorDevice Design Techniques	2003	430
Current and Future Challenges in Radiation Effects on CMOS Electronics P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, IEEE Transactions on Nuclear Science EngineeringVlsi DesignComputer ArchitectureTotal Dose ToleranceElectromagnetic Compatibility	2010	353
Production and propagation of single-event transients in high-speed digital logic ICs P.E. Dodd, M.R. Shaneyfelt, J. Félix, IEEE Transactions on Nuclear Science Hardware SecurityElectrical EngineeringEngineeringVlsi DesignVlsi Architecture	2004	328
Challenges in hardening technologies using shallow-trench isolation M.R. Shaneyfelt, P.E. Dodd, B.L. Draper, IEEE Transactions on Nuclear Science Electrical EngineeringUnderground InfrastructureEngineeringShallow-trench IsolationZonal Isolation	1998	244
Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance J.R. Schwank, M.R. Shaneyfelt, P.E. Dodd IEEE Transactions on Nuclear Science	2013	188
SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments P.E. Dodd, A.R. Shaneyfelt, K.M. Horn, IEEE Transactions on Nuclear Science First-principles CalculationsEngineeringSilicon On InsulatorSoi SramsIon Implantation	2001	184
Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction Jeffrey D. Black, P.E. Dodd, Kevin M. Warren IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsSingle-event EffectsComputer ArchitectureHardware Security	2013	175
Critical charge concepts for CMOS SRAMs P.E. Dodd, F.W. Sexton IEEE Transactions on Nuclear Science Hardware SecurityDevice ModelingElectrical EngineeringEngineeringVlsi Design	1995	166

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