L. W. Massengill - Concepedia

Author

L. W. Massengill

Also Known As

Jenny Xiong, L Massengill, L W Massengill, L. Massengill, L. W Massengill, L. W. MASSENGILL, L. W. Massengill, L.W. Massengill, Lloyd Massengill, Lloyd W. Massengill

370

Publications

12.1K

Citations

H-Index

167

Concepts

All Affiliations

Vanderbilt University United States Naval Research Laboratory Cisco Systems (United States)Sandia National Laboratories Naval Sea Systems Command

About

L. W. Massengill is an author at Vanderbilt University specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	58	210	11.2K
2	Natural Sciences	16	19	1.1K
3	Education	7	7	426
4	Health Sciences	6	6	357
5	Medicine	5	5	245

L. W. Massengill

224

Publications

11.6K

Citations

H-Index

Page 1

	Year	Citations
Basic mechanisms and modeling of single-event upset in digital microelectronics P.E. Dodd, L. W. Massengill IEEE Transactions on Nuclear Science EngineeringComputer ArchitectureBasic MechanismsIntegrated CircuitsHardware Security	2003	1.1K
Charge Collection and Charge Sharing in a 130 nm CMOS Technology Oluwole A. Amusan, Arthur F. Witulski, L. W. Massengill, IEEE Transactions on Nuclear Science Low-power ElectronicsHardware SecurityElectrical EngineeringSingle Event UpsetEngineering	2006	394
Single Event Transients in Digital CMOS—A Review V. Ferlet-Cavrois, L. W. Massengill, Pascale Gouker IEEE Transactions on Nuclear Science EngineeringComputer ArchitectureFault ToleranceHardware SecurityReliability Engineering	2013	383
Monte Carlo Simulation of Single Event Effects Robert A. Weller, Marcus H. Mendenhall, Robert A. Reed, IEEE Transactions on Nuclear Science EngineeringMonte Carlo MethodsSimulationMonte Carlo ComputationsElectromagnetic Compatibility	2010	217
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies Balaji Narasimham, B. L. Bhuva, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science EngineeringVlsi DesignNuclear PhysicsIon Beam InstrumentationIntegrated Circuits	2007	170
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM Kevin M. Warren, Robert A. Weller, Marcus H. Mendenhall, IEEE Transactions on Nuclear Science Charge DepositionIon ImplantationEngineeringNuclear PhysicsPhysics	2005	169
Impact of scaling on soft-error rates in commercial microprocessors N. Seifert, Xiao‐Wei Zhu, L. W. Massengill IEEE Transactions on Nuclear Science EngineeringVlsi DesignComputer ArchitectureCommercial MicroprocessorsProcess Scaling	2002	166
A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit J. S. Kauppila, A. Sternberg, Michael L. Alles, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringBsim4 Transistor ModelEngineeringVlsi Design	2009	159
Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design Brian D. Olson, Dennis R. Ball, Kevin M. Warren, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringVlsi DesignPhysicsNanoelectronics	2005	153
Comparison of Combinational and Sequential Error Rates for a Deep Submicron Process N. N. Mahatme, S. Jagannathan, T. D. Loveless, IEEE Transactions on Nuclear Science EngineeringVlsi DesignComputer ArchitectureRecurrent Neural NetworkHardware Security	2011	146

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