M.R. Shaneyfelt

Radiation Effects in MOS Oxides

James R. Schwank, M.R. Shaneyfelt, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2008 · 935 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices

Daniel M. Fleetwood, P.S. Winokur, R.A. Reber et al. · Journal of Applied Physics · 1993 · 500 citations

Engineering, Electrical Engineering, Materials Science +17

Radiation effects in SOI technologies

J.R. Schwank, V. Ferlet-Cavrois, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 2003 · 434 citations

Engineering, Computer Engineering, Electrical Engineering +17

Current and Future Challenges in Radiation Effects on CMOS Electronics

P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank et al. · IEEE Transactions on Nuclear Science · 2010 · 362 citations

Engineering, Computer Engineering, Electrical Engineering +17

Production and propagation of single-event transients in high-speed digital logic ICs

P.E. Dodd, M.R. Shaneyfelt, J. Félix et al. · IEEE Transactions on Nuclear Science · 2004 · 329 citations

Engineering, Computer Engineering, Electrical Engineering +17