R.A. Reber

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices

Daniel M. Fleetwood, P.S. Winokur, R.A. Reber et al. · Journal of Applied Physics · 1993 · 494 citations

Engineering, Integrated Circuits, Defect Tolerance +18

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1994 · 280 citations

Electrical Engineering, Semiconductor Device, Engineering +13

New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)

Daniel M. Fleetwood, S. L. Miller, R.A. Reber et al. · IEEE Transactions on Nuclear Science · 1992 · 150 citations

Engineering, Radiation Materials Science, Radiation-induced Oxide-trap Charge +16

The role of border traps in MOS high-temperature postirradiation annealing response

Daniel M. Fleetwood, M.R. Shaneyfelt, L.C. Riewe et al. · IEEE Transactions on Nuclear Science · 1993 · 84 citations · Full text

Engineering, Midgap-voltage Shift, Integrated Circuits +20

Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices

Daniel M. Fleetwood, R.A. Reber, P.S. Winokur · IEEE Transactions on Nuclear Science · 1991 · 75 citations

Electrical Engineering, Engineering, Rf Semiconductor +13