R.A. Reber - Concepedia

Concepedia

Author

R.A. Reber

Sandia National Laboratories

Also Known As

R. A. Reber, R.A Reber, R.A. Reber, Reber, R. A. Jr., Richard A. Reber

18

Publications

1.3K

Citations

11

H-Index

24

Concepts

All Affiliations

Sandia National Laboratories Sandia National Laboratories California

RR

About

R.A. Reber is an author at Sandia National Laboratories specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	1.3K
2	Applied Physics	10	10	1.3K
3	Electrical Engineering	10	10	1.3K
4	Materials Science	3	3	139
5	Materials Engineering	1	1	84

R.A. Reber

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11

Publications

1.3K

Citations

11

H-Index

	Year	Citations
Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices Daniel M. Fleetwood, P.S. Winokur, R.A. Reber, Journal of Applied Physics EngineeringIntegrated CircuitsDefect ToleranceOxide TrapsSemiconductor Device	1993	494
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringPhysicsStress-induced Leakage Current	1994	280
New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors) Daniel M. Fleetwood, S. L. Miller, R.A. Reber, IEEE Transactions on Nuclear Science EngineeringRadiation Materials ScienceRadiation-induced Oxide-trap ChargeNew InsightsFree Parameters	1992	150
The role of border traps in MOS high-temperature postirradiation annealing response Daniel M. Fleetwood, M.R. Shaneyfelt, L.C. Riewe, IEEE Transactions on Nuclear Science EngineeringMidgap-voltage ShiftIntegrated CircuitsBorder TrapsSemiconductor Device	1993	84
Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices Daniel M. Fleetwood, R.A. Reber, P.S. Winokur IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringRf SemiconductorPhysicsPositive-bias Irradiation	1991	75
Thermally stimulated current measurements of SiO2 defect density and energy in irradiated metal-oxide-semiconductor capacitors R.A. Reber, Daniel M. Fleetwood Review of Scientific Instruments Electrical EngineeringCurrent MeasurementsEngineeringPhysicsStress-induced Leakage Current	1992	43
Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors Daniel M. Fleetwood, P.S. Winokur, L.C. Riewe, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringNegative Charge DensitiesMetal–oxide–semiconductor Capacitors	1998	42
Effects of reliability screens on MOS charge trapping M.R. Shaneyfelt, P.S. Winokur, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science EngineeringRadiation EffectRadiation ExposureStress TemperatureSemiconductor Device	1996	41
Trapped-hole annealing and electron trapping in metal-oxide-semiconductor devices Daniel M. Fleetwood, R.A. Reber, P.S. Winokur Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1992	34
Thermally stimulated current in SiO2 Daniel M. Fleetwood, R.A. Reber, L.C. Riewe, Microelectronics Reliability EngineeringOxide ElectronicsApplied PhysicsSiliceneSilicon On Insulator	1999	19

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