S.L. Kosier

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1994 · 283 citations

Engineering, Diagnostic Sciences, Radiation Measurement +15

Charge separation for bipolar transistors

S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1993 · 200 citations

Engineering, Electrical Engineering, Microelectronics +16

Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs

S.L. Kosier, A. Wei, Ronald D. Schrimpf et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

Engineering, Electrical Engineering, Radiation Dosimetry +13

Bounding the total-dose response of modern bipolar transistors

S.L. Kosier, W.E. Combs, A. Wei et al. · IEEE Transactions on Nuclear Science · 1994 · 79 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters

Aimin Wu, Ronald D. Schrimpf, Hugh Barnaby et al. · IEEE Transactions on Nuclear Science · 1997 · 55 citations

Engineering, Electrical Engineering, Electronic Materials +16