A. Wei

Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1994 · 280 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Charge separation for bipolar transistors

S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin et al. · IEEE Transactions on Nuclear Science · 1993 · 199 citations

Engineering, Net Positive Oxide, Radiation Effect +17

Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs

S.L. Kosier, A. Wei, Ronald D. Schrimpf et al. · IEEE Transactions on Electron Devices · 1995 · 112 citations

Engineering, Radiation Materials Science, Radiation Physics +21

Bounding the total-dose response of modern bipolar transistors

S.L. Kosier, W.E. Combs, A. Wei et al. · IEEE Transactions on Nuclear Science · 1994 · 79 citations

Device Modeling, Electrical Engineering, Transistor Gain +14

Effect of floating-body charge on SOI MOSFET design

A. Wei, M. Sherony, D.A. Antoniadis · IEEE Transactions on Electron Devices · 1998 · 64 citations

Device Modeling, Low-power Electronics, Electrical Engineering +10