R.N. Nowlin - Concepedia

Concepedia

Author

R.N. Nowlin

University of Arizona

Also Known As

Nowlin, R. N., R.N. Nowlin, Robert N. Nowlin

14

Publications

1.3K

Citations

10

H-Index

33

Concepts

All Affiliations

University of Arizona Sandia National Laboratories Naval Surface Warfare Center Microelectronics Research Development (United States)Naval Air Warfare Center Weapons Division

RN

About

R.N. Nowlin is an author at University of Arizona specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	1.3K
2	Applied Physics	9	9	1.3K
3	Electrical Engineering	9	9	1.3K
4	Medicine	4	4	664
5	Computer Engineering	1	1	16

R.N. Nowlin

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10

Publications

1.3K

Citations

10

H-Index

	Year	Citations
Response of advanced bipolar processes to ionizing radiation E.W. Enlow, R.L. Pease, W.E. Combs, IEEE Transactions on Nuclear Science EngineeringIrradiation TestingRadiation ExposureRadiation ProtectionRadiation Testing	1991	319
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringPhysicsStress-induced Leakage Current	1994	280
Charge separation for bipolar transistors S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin, IEEE Transactions on Nuclear Science EngineeringNet Positive OxideRadiation EffectCharge TransportSemiconductor Device	1993	199
Trends in the total-dose response of modern bipolar transistors R.N. Nowlin, E.W. Enlow, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science EngineeringRadiation PhysicsRadiation EffectRadiation ExposureRadiation Protection	1992	193
Hardness-assurance and testing issues for bipolar/BiCMOS devices R.N. Nowlin, Daniel M. Fleetwood, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science EngineeringRadiation PhysicsRadiation EffectDose-rate DependenceRadiation Exposure	1993	104
Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures R.L. Pease, D Platteter, G.W. Dunham, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringNanoelectronicsBias Temperature Instability	2004	87
Saturation of the dose-rate response of bipolar transistors below 10 rad(SiO/sub 2/)/s: implications for hardness assurance R.N. Nowlin, Daniel M. Fleetwood, Ronald D. Schrimpf IEEE Transactions on Nuclear Science Hardness AssuranceEngineeringDose-rate ResponseRadiation EffectRadiation Exposure	1994	48
Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices R.N. Nowlin, Ronald D. Schrimpf, E.W. Enlow, Electrical EngineeringIon ImplantationEngineeringCrystalline DefectsModern Bipolar Devices	2002	31
Evaluating TM1019.6 ELDRS screening methods using gated lateral PNP transistors R.N. Nowlin, R.L. Pease, D Platteter, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPnp ResultsTm1019.6 EldrsBias Temperature Instability	2005	16
Spectroscopic diagnostics of temperature-controlled trench etching of silicon Ole Krogh, Robert N. Carlile, R.N. Nowlin Plasma Chemistry and Plasma Processing EngineeringPhysicsMicrofabricationApplied PhysicsTemperature-controlled Trench Etching	1995	10

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