R.L. Pease - Concepedia

Author

R.L. Pease

Also Known As

Pease, R.L. [RLP Research, Albuquerque, NM (United States)]; Brown, D.B. [Naval Research Lab., Washington, DC (United States)]; Cohn, L. [Defense Special Weapons Agency, Alexandria, VA (United States)] [and others], Pease,Ronald L, R. L. Pease, R. Pease, R.L. Pease, RONALD L. PEASE, Ronald L. Pease, Ronald Pease

152

Publications

5.3K

Citations

H-Index

113

Concepts

All Affiliations

Sandia National Laboratories Naval Surface Warfare Center Vanderbilt University University of Arizona Naval Sea Systems Command

About

R.L. Pease is an author at Sandia National Laboratories specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	40	83	4.6K
2	Applied Physics	32	51	3.3K
3	Medicine	22	30	1.6K
4	Health Sciences	12	13	631
5	Natural Sciences	5	5	176

R.L. Pease

Publications

4.9K

Citations

H-Index

Page 1

	Year	Citations
Response of advanced bipolar processes to ionizing radiation E.W. Enlow, R.L. Pease, W.E. Combs, IEEE Transactions on Nuclear Science EngineeringIrradiation TestingRadiation ExposureRadiation ProtectionRadiation Testing	1991	319
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringPhysicsStress-induced Leakage Current	1994	280
Charge separation for bipolar transistors S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin, IEEE Transactions on Nuclear Science EngineeringNet Positive OxideRadiation EffectCharge TransportSemiconductor Device	1993	199
Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures S.C. Witczak, Ronald D. Schrimpf, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science EngineeringRadiation EffectRadiation ExposureHardness Assurance TestingDefect Tolerance	1997	132
Dependence of total dose response of bipolar linear microcircuits on applied dose rate S. McClure, R.L. Pease, W. Will, IEEE Transactions on Nuclear Science Radiation PhysicsRadiation EffectRadiation ExposureDose RateLow Dose Rate	1994	127
Mechanisms for radiation dose-rate sensitivity of bipolar transistors Harold P. Hjalmarson, R.L. Pease, S.C. Witczak, IEEE Transactions on Nuclear Science EngineeringRadiation EffectRadiation ExposureRadiation Dose-rate SensitivityBimolecular Mechanisms	2003	121
Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs D. Schmidt, Daniel M. Fleetwood, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringRf SemiconductorPhysicsNanoelectronics	1995	118
Total ionizing dose effects in bipolar devices and circuits R.L. Pease IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringDose EffectsTotal Dose	2003	114
Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs S.L. Kosier, A. Wei, Ronald D. Schrimpf, IEEE Transactions on Electron Devices EngineeringRadiation Materials ScienceRadiation PhysicsRadiation EffectRadiation Exposure	1995	112
Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor D. Schmidt, Aimin Wu, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringExcess BaseElectronic Engineering	1996	108

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