S.C. Witczak

Physical model for enhanced interface-trap formation at low dose rates

Sergey N. Rashkeev, C.R. Cirba, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2002 · 193 citations

Electrical Engineering, Bipolar Devices, Engineering +12

Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

Daniel M. Fleetwood, L.C. Riewe, J.R. Schwank et al. · IEEE Transactions on Nuclear Science · 1996 · 172 citations

Electrical Engineering, Engineering, Radiation Generation +14

Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

S.C. Witczak, Ronald D. Schrimpf, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 1997 · 132 citations

Engineering, Radiation Effect, Radiation Exposure +19

Space charge limited degradation of bipolar oxides at low electric fields

S.C. Witczak, R.C. Lacoe, D.C. Mayer et al. · IEEE Transactions on Nuclear Science · 1998 · 129 citations

Electrical Engineering, Ion Implantation, Engineering +15

Mechanisms for radiation dose-rate sensitivity of bipolar transistors

Harold P. Hjalmarson, R.L. Pease, S.C. Witczak et al. · IEEE Transactions on Nuclear Science · 2003 · 121 citations

Engineering, Radiation Effect, Radiation Exposure +18