Ronald D. Schrimpf - Concepedia

Author

Ronald D. Schrimpf

Also Known As

Mannoni, V, R D Schrimpf, R Reed, R Schrimpf, R. D. SCHRIMPF, R. D. Schrimpf, R. Schrimpf, R.A. Schrimpf, R.D Schrimpf, R.D. SCHRIMPF

950

Publications

24.7K

Citations

H-Index

235

Concepts

All Affiliations

Vanderbilt University University of Arizona Sandia National Laboratories Goddard Space Flight Center IMEC

About

Ronald D. Schrimpf is an author at Vanderbilt University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	72	471	21.2K
2	Medicine	25	42	2.2K
3	Health Sciences	11	11	588
4	Education	6	6	349
5	Business	1	1	27

Ronald D. Schrimpf

505

Publications

22.3K

Citations

H-Index

Page 1

	Year	Citations
Charge Collection and Charge Sharing in a 130 nm CMOS Technology Oluwole A. Amusan, Arthur F. Witulski, L. W. Massengill, IEEE Transactions on Nuclear Science Low-power ElectronicsHardware SecurityElectrical EngineeringSingle Event UpsetEngineering	2006	394
Response of advanced bipolar processes to ionizing radiation E.W. Enlow, R.L. Pease, W.E. Combs, IEEE Transactions on Nuclear Science EngineeringIrradiation TestingRadiation ExposureRadiation ProtectionRadiation Testing	1991	319
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringPhysicsStress-induced Leakage Current	1994	280
Monte Carlo Simulation of Single Event Effects Robert A. Weller, Marcus H. Mendenhall, Robert A. Reed, IEEE Transactions on Nuclear Science EngineeringMonte Carlo MethodsSimulationMonte Carlo ComputationsElectromagnetic Compatibility	2010	217
Charge separation for bipolar transistors S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin, IEEE Transactions on Nuclear Science EngineeringNet Positive OxideRadiation EffectCharge TransportSemiconductor Device	1993	199
Trends in the total-dose response of modern bipolar transistors R.N. Nowlin, E.W. Enlow, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science EngineeringRadiation PhysicsRadiation EffectRadiation ExposureRadiation Protection	1992	193
Physical model for enhanced interface-trap formation at low dose rates Sergey N. Rashkeev, C.R. Cirba, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Electrical EngineeringBipolar DevicesEngineeringPhysicsNanoelectronics	2002	193
Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions Brian D. Sierawski, Jonathan A. Pellish, Robert A. Reed, IEEE Transactions on Nuclear Science Rate PredictionsLow Energy ProtonsElectrical EngineeringHeavy Ion PhysicEngineering	2009	191
Single-Event Burnout Mechanisms in SiC Power MOSFETs Arthur F. Witulski, Dennis R. Ball, K.F. Galloway, IEEE Transactions on Nuclear Science Electrical EngineeringExperimental DataEngineeringSemiconductor DeviceHigh Voltage Engineering	2018	175
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides Daniel M. Fleetwood, L.C. Riewe, J.R. Schwank, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringRadiation GenerationNanoelectronicsOxide Electronics	1996	172

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