M. Sherony

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

X. Chen, S. Samavedam, Vijay Narayanan et al. · 2008 · 113 citations

Engineering, Computer Engineering, Electrical Engineering +16

Effect of floating-body charge on SOI MOSFET design

A. Wei, M. Sherony, D.A. Antoniadis · IEEE Transactions on Electron Devices · 1998 · 64 citations

Engineering, Electrical Engineering, Microelectronics +16

SOI MOSFET effective channel mobility

M. Sherony, L.T. Su, J.E. Chung et al. · IEEE Transactions on Electron Devices · 1994 · 61 citations

Engineering, Electrical Engineering, Microelectronics +13

32nm general purpose bulk CMOS technology for high performance applications at low voltage

F. Arnaud, J. Liu, Yong Meng Lee et al. · 2008 · 56 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 4-91-GHz traveling-wave amplifier in a standard 0.12-/spl mu/m SOI CMOS microprocessor technology

Jean‐Olivier Plouchart, Jonghae Kim, N. Zamdmer et al. · IEEE Journal of Solid-State Circuits · 2004 · 50 citations

Engineering, Electrical Engineering, Analog Electronics +16