IEEE Transactions on Electron Devices · 1994 · 61 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThin FilmsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Thin FilmsElectric Field DistributionElectric Field EffectsFilm ThicknessFully Depleted Silicon-on-insulator TransistorsGate Oxide Thickness Effects
The standard bulk MOSFET definition for effective electric field is modified for SOI devices to account for nonzero electric field at the back oxide interface. The effective channel mobility in fully-depleted n-channel SOI MOSFET's is shown to be independent of applied backgate bias when the modified E/sub eff/ definition is used. The effective channel mobility as a function of E/sub eff/ is also shown to be independent of film thickness for fully-depleted devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Subthreshold slope of thin-film SOI MOSFET's
J.-P. Colinge · IEEE Electron Device Letters · 1986 · 272 citations