S. Samavedam

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Electrical Engineering, Engineering, Physics +13

Contributions to the effective work function of platinum on hafnium dioxide

J. Schaeffer, L. R. C. Fonseca, S. Samavedam et al. · Applied Physics Letters · 2004 · 194 citations

Materials Science, Electrical Engineering, Engineering +12

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Materials Science, Electrical Engineering, Semiconductor Device +14

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

X. Chen, S. Samavedam, Vijay Narayanan et al. · 2008 · 112 citations

Low-power Electronics, Low Power Applications, Electrical Engineering +14

Fermi level pinning at the polySi/metal oxide interface

Chris Hobbs, L.M. Fonseca, V. Dhandapani et al. · 2004 · 111 citations

Engineering, Silicon On Insulator, Semiconductor Device +16