J. Schaeffer

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

R. Carter, J. Mazurier, Luca Pirro et al. · 2016 · 283 citations · Full text

Engineering, Vlsi Design, Radio Frequency +16

Contributions to the effective work function of platinum on hafnium dioxide

J. Schaeffer, L. R. C. Fonseca, S. Samavedam et al. · Applied Physics Letters · 2004 · 194 citations

Materials Science, Electrical Engineering, Engineering +12

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

J. Schaeffer, S. Samavedam, D. C. Gilmer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 100 citations

Engineering, Electrical Properties, Gate Dielectric +18

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Sige Channels, Low Power Applications, Engineering +16

Challenges for the integration of metal gate electrodes

J. Schaeffer, C. Capasso, L. R. C. Fonseca et al. · 2005 · 71 citations

Materials Science, Electrical Engineering, Metal Gate Electrodes +14