22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

Abstract

22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ~30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910μ/μm (856μ/μm) at 0.8 V and 100nA/μm Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> for 8T logic libraries, as well as 0.62V and 0.52V V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/μm I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> , and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAx</sub> of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAx</sub> extends the capabilities to 5G and milli-meter wave (>24GHz) RF applications.